DMN3026LVTQ-13
Diodes Incorporated
- Lifecycle statusActive
- RoHSRoHS compliant
- REACHREACH compliant
- DescriptionMOSFET N-CH 30V 6.6A TSOT26
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- ApplicationSWITCHING
- JESD-30 CodeR-PDSO-G6
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Package ShapeRECTANGULAR
- Package StyleSMALL OUTLINE Meter
- Surface MountYES
- Terminal FormGULL WING
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- J-STD-609 Codee3
- Operating ModeENHANCEMENT MODE
- Terminal FinishMatte Tin (Sn)
- Terminal PositionDUAL
- Additional FeatureHIGH RELIABILITY
- Number of Elements1
- Number of Terminals6
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Power Dissipation-Max (W)1.5
- Drain Current-Max (ID) (A)6.6
- Moisture Sensitivity Level1
- Transistor Element MaterialSILICON
- DS Breakdown Voltage-Min (V)30
- Feedback Cap-Max (Crss) (pF)49
- Peak Reflow Temperature (Cel)260
- Operating Temperature-Max (Cel)150
- Operating Temperature-Min (Cel)-55
- Pulsed Drain Current-Max (IDM) (A)35
- Drain-source On Resistance-Max (ohm)0.023
- Screening Level / Reference StandardAEC-Q101; MIL-STD-202
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DMN3026LVTQ-13