DMG4511SK4-7 by Diodes Incorporated | Sourcengine

Diodes Incorporated DMG4511SK4-7

Lifecycle status
Active
RoHS
RoHS compliant
REACH
REACH compliant
Description
Power Field-Effect Transistor, 5.3A I(D), 35V, 0.035ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
Category
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
SWITCHING
JESD-30 Code
R-PSSO-G4
Configuration
COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE
JEDEC-95 Code
TO-252
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
FET Technology
METAL-OXIDE SEMICONDUCTOR
J-STD-609 Code
e3
Operating Mode
ENHANCEMENT MODE
Terminal Finish
MATTE TIN
Terminal Position
SINGLE
Additional Feature
HIGH RELIABILITY
Number of Elements
2
Number of Terminals
4
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL AND P-CHANNEL
Power Dissipation-Max (W)
8.9
Drain Current-Max (ID) (A)
5.3
Moisture Sensitivity Level
1
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
35
Peak Reflow Temperature (Cel)
260
Operating Temperature-Max (Cel)
150
Pulsed Drain Current-Max (IDM) (A)
50
Drain-source On Resistance-Max (ohm)
0.035
Time@Peak Reflow Temperature-Max (s)
30