DM2202J1-12I by ENHANCED MEMORY SYSTEMS INC | Sourcengine

ENHANCED MEMORY SYSTEMS INC DM2202J1-12I

Lifecycle status
Discontinued
Description
Cache DRAM, 1MX4, 30ns, MOS, PDSO28
Category
Semiconductors Memory ICs DRAMs CACHE DRAM

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8542.32.00.02
SB Code
8542.32.00.15

I/O Type
COMMON
Technology
MOS
Access Mode
FAST PAGE/STATIC COLUMN
JESD-30 Code
R-PDSO-J28
Memory Width
4
Organization
1MX4
Package Code
SOJ
Self Refresh
NO
JESD-609 Code
e0
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
J BEND
Memory Density
4194304 bit
Memory IC Type
CACHE DRAM
Operating Mode
ASYNCHRONOUS
Refresh Cycles
1024
Terminal Pitch
1.27 mm
Access Time-Max
30 ns
Number of Ports
1
Number of Words
1048576 words
Terminal Finish
TIN LEAD
Temperature Grade
INDUSTRIAL
Terminal Position
DUAL
Additional Feature
RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH; 512 X 4 SRAM
Supply Current-Max
225 mA
Number of Functions
1
Number of Terminals
28
Standby Current-Max
0.001 Amp
Number of Words Code
1M
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Output Characteristics
3-STATE
Package Equivalence Code
SOJ28,.34
Operating Temperature-Max
85 Cel
Operating Temperature-Min
-40 Cel
Supply Voltage-Max (Vsup)
3.6 V
Supply Voltage-Min (Vsup)
3 V
Supply Voltage-Nom (Vsup)
3.3 V