DM2200J-15L by ENHANCED MEMORY SYSTEMS INC | Sourcengine

ENHANCED MEMORY SYSTEMS INC DM2200J-15L

Lifecycle status
Discontinued
Description
Cache DRAM, 4MX1, 35ns, MOS, PDSO28
Category
Semiconductors Memory ICs DRAMs CACHE DRAM

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8542.32.00.02
SB Code
8542.32.00.15

I/O Type
SEPARATE
Technology
MOS
Access Mode
FAST PAGE/STATIC COLUMN
JESD-30 Code
R-PDSO-J28
Memory Width
1
Organization
4MX1
Package Code
SOJ
Self Refresh
YES
JESD-609 Code
e0
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
J BEND
Memory Density
4194304 bit
Memory IC Type
CACHE DRAM
Operating Mode
ASYNCHRONOUS
Refresh Cycles
1024
Terminal Pitch
1.27 mm
Access Time-Max
35 ns
Number of Ports
1
Number of Words
4194304 words
Terminal Finish
Tin/Lead (Sn/Pb)
Temperature Grade
COMMERCIAL
Terminal Position
DUAL
Additional Feature
RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH; 2K X 1 SRAM
Supply Current-Max
180 mA
Number of Functions
1
Number of Terminals
28
Standby Current-Max
0.001 Amp
Number of Words Code
4M
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Output Characteristics
3-STATE
Package Equivalence Code
SOJ28,.34
Operating Temperature-Max
70 Cel
Operating Temperature-Min
0 Cel
Supply Voltage-Max (Vsup)
5.25 V
Supply Voltage-Min (Vsup)
4.75 V
Supply Voltage-Nom (Vsup)
5 V