CYRS1645KV18-250GCMB
Cypress Semiconductor Corporation
- Lifecycle statusTransferred
- REACHREACH compliant
- DescriptionQDR II Plus SRAM, 4MX36, 0.85ns, CMOS, CBGA165
- Category
- ECCN9A515.E
- ECCN GovernanceEAR
- HTS Code8542.32.00.41
- SB Code8542.32.00.40
- I/O TypeSEPARATE
- TechnologyCMOS
- Total Dose200k Rad(Si) V
- Width (mm)21
- Length (mm)25
- JESD-30 CodeR-CBGA-X165
- Memory Width36
- Package CodeCGA
- Output EnableNO
- Package ShapeRECTANGULAR
- Package StyleGRID ARRAY Meter
- Surface MountNO
- Terminal FormUNSPECIFIED
- J-STD-609 Codee0
- Memory IC TypeQDR II PLUS SRAM
- Operating ModeSYNCHRONOUS
- Number of Ports2
- Parallel/SerialPARALLEL
- Terminal FinishTin/Lead (Sn/Pb)
- Temperature GradeMILITARY
- Terminal PositionBOTTOM
- Additional FeaturePIPELINED ARCHITECTURE
- Memory Organization4MX36
- Number of Functions1
- Number of Terminals165
- Terminal Pitch (mm)1.27
- Access Time-Max (ns)0.85
- Number of Words Code4M
- Memory Density (bits)150994944
- Package Body MaterialCERAMIC, METAL-SEALED COFIRED
- Output Characteristics3-STATE
- Seated Height-Max (mm)5.38
- Supply Voltage-Max (V)1.9
- Supply Voltage-Min (V)1.7
- Supply Voltage-Nom (V)1.8
- Number of Words (words)4194304
- Standby Current-Max (A)0.39
- Standby Voltage-Min (V)1.7
- Supply Current-Max (mA)1040
- Package Equivalence CodeCGA165,11X15,50
- Clock Frequency-Max (MHz)250
- Moisture Sensitivity Level1
- Operating Temperature-Max (Cel)125
- Operating Temperature-Min (Cel)-55
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CYRS1645KV18-250GCMB