CY7C1510AV18-250BZC
Cypress Semiconductor Corporation
- Lifecycle statusDiscontinued
- DescriptionQDR SRAM, 8MX8, 0.45ns, CMOS, PBGA165
- Category
- ECCN3A991.B.2.A
- ECCN GovernanceEAR
- HTS Code8542.32.00.41
- SB Code8542.32.00.40
- Width15 mm
- Length17 mm
- I/O TypeSEPARATE
- TechnologyCMOS
- JESD-30 CodeR-PBGA-B165
- Memory Width8
- Organization8MX8
- Package CodeLBGA
- JESD-609 Codee0
- Package ShapeRECTANGULAR
- Package StyleGRID ARRAY, LOW PROFILE Meter
- Surface MountYES
- Terminal FormBALL
- Memory Density67108864 bit
- Memory IC TypeQDR SRAM
- Operating ModeSYNCHRONOUS
- Terminal Pitch1 mm
- Access Time-Max0.45 ns
- Number of Words8388608 words
- Parallel/SerialPARALLEL
- Terminal FinishTIN LEAD
- Seated Height-Max1.4 mm
- Temperature GradeCOMMERCIAL
- Terminal PositionBOTTOM
- Additional FeaturePIPELINED ARCHITECTURE
- Supply Current-Max1230 mA
- Number of Functions1
- Number of Terminals165
- Standby Current-Max0.4 Amp
- Standby Voltage-Min1.7 V
- Number of Words Code8M
- Qualification StatusNot Qualified
- Package Body MaterialPLASTIC/EPOXY
- Output Characteristics3-STATE
- Package Equivalence CodeBGA165,11X15,40
- Operating Temperature-Max70 Cel
- Operating Temperature-Min0 Cel
- Supply Voltage-Max (Vsup)1.9 V
- Supply Voltage-Min (Vsup)1.7 V
- Supply Voltage-Nom (Vsup)1.8 V
- Clock Frequency-Max (fCLK)250 MHz
- Moisture Sensitivity Level3
- Peak Reflow Temperature (Cel)220
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CY7C1510AV18-250BZC