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CY7C1312CV18-250BZI

Cypress Semiconductor Corporation

Cypress Semiconductor Corporation CY7C1312CV18-250BZI
  • ECCN
    3A991.b.2.a
  • ECCN Governance
    EAR
  • HTS Code
    8542.32.00.41
  • SB Code
    8542.32.00.40
  • I/O Type
    SEPARATE
  • Technology
    CMOS
  • Width (mm)
    13
  • Length (mm)
    15
  • JESD-30 Code
    R-PBGA-B165
  • Memory Width
    18
  • Package Code
    LBGA
  • Package Shape
    RECTANGULAR
  • Package Style
    GRID ARRAY, LOW PROFILE Meter
  • Surface Mount
    YES
  • Terminal Form
    BALL
  • J-STD-609 Code
    e0
  • Memory IC Type
    QDR SRAM
  • Operating Mode
    SYNCHRONOUS
  • Parallel/Serial
    PARALLEL
  • Terminal Finish
    Tin/Lead (Sn/Pb)
  • DLA Qualification
    Not Qualified
  • Temperature Grade
    INDUSTRIAL
  • Terminal Position
    BOTTOM
  • Additional Feature
    PIPELINED ARCHITECTURE
  • Memory Organization
    1MX18
  • Number of Functions
    1
  • Number of Terminals
    165
  • Terminal Pitch (mm)
    1
  • Access Time-Max (ns)
    0.45
  • Number of Words Code
    1M
  • Memory Density (bits)
    18874368
  • Package Body Material
    PLASTIC/EPOXY
  • Output Characteristics
    3-STATE
  • Seated Height-Max (mm)
    1.4
  • Supply Voltage-Max (V)
    1.9
  • Supply Voltage-Min (V)
    1.7
  • Supply Voltage-Nom (V)
    1.8
  • Number of Words (words)
    1048576
  • Standby Current-Max (A)
    0.4
  • Standby Voltage-Min (V)
    1.7
  • Supply Current-Max (mA)
    600
  • Package Equivalence Code
    BGA165,11X15,40
  • Clock Frequency-Max (MHz)
    250
  • Moisture Sensitivity Level
    3
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Operating Temperature-Max (Cel)
    85
  • Operating Temperature-Min (Cel)
    -40
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED

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CY7C1312CV18-250BZI
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CY7C1312CV18-250BZI