CY14B116S-BZ25XI by Cypress Semiconductor Corporation | Sourcengine

Cypress Semiconductor Corporation CY14B116S-BZ25XI

Lifecycle status
Active
RoHS
RoHS compliant
REACH
REACH compliant
Description
NVRAM NVSRAM Parallel 16Mbit 5V 165-Pin FBGA Tray
Category
Semiconductors Memory ICs SRAMs NON-VOLATILE SRAM

ECCN
3A991.B.2.B
ECCN Governance
EAR
HTS Code
8542.32.00.41
SB Code
8542.32.00.40

Technology
CMOS
Width (mm)
15
Length (mm)
17
JESD-30 Code
R-PBGA-B165
Memory Width
32
Package Code
LBGA
Package Shape
RECTANGULAR
Package Style
GRID ARRAY, LOW PROFILE Meter
Surface Mount
YES
Terminal Form
BALL
J-STD-609 Code
e1
Memory IC Type
NON-VOLATILE SRAM
Operating Mode
ASYNCHRONOUS
Parallel/Serial
PARALLEL
Terminal Finish
TIN SILVER COPPER
Temperature Grade
INDUSTRIAL
Terminal Position
BOTTOM
Memory Organization
512KX32
Number of Functions
1
Number of Terminals
165
Terminal Pitch (mm)
1
Access Time-Max (ns)
25
Number of Words Code
512K
Memory Density (bits)
16777216
Package Body Material
PLASTIC/EPOXY
Seated Height-Max (mm)
1.4
Supply Voltage-Max (V)
3.6
Supply Voltage-Min (V)
2.7
Supply Voltage-Nom (V)
3
Number of Words (words)
524288
Moisture Sensitivity Level
3
Peak Reflow Temperature (Cel)
260
Operating Temperature-Max (Cel)
85
Operating Temperature-Min (Cel)
-40