CY14B108N-ZSP20XIT by Cypress Semiconductor Corporation | Sourcengine

Cypress Semiconductor Corporation CY14B108N-ZSP20XIT

Lifecycle status
Transferred
RoHS
RoHS compliant
REACH
REACH compliant
Description
Non-Volatile SRAM, 512KX16, 20ns, CMOS, PDSO54
Category
Semiconductors Memory ICs SRAMs NON-VOLATILE SRAM

ECCN
3A991.b.2.a
ECCN Governance
EAR
HTS Code
8542.32.00.41
SB Code
8542.32.00.40

Technology
CMOS
Width (mm)
10.16
Length (mm)
22.415
JESD-30 Code
R-PDSO-G54
Memory Width
16
Package Code
TSOP2
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE, THIN PROFILE Meter
Surface Mount
YES
Terminal Form
GULL WING
J-STD-609 Code
e3
Memory IC Type
NON-VOLATILE SRAM
Operating Mode
ASYNCHRONOUS
Parallel/Serial
PARALLEL
Terminal Finish
Matte Tin (Sn)
DLA Qualification
Not Qualified
Temperature Grade
INDUSTRIAL
Terminal Position
DUAL
Memory Organization
512KX16
Number of Functions
1
Number of Terminals
54
Terminal Pitch (mm)
0.8
Access Time-Max (ns)
20
Number of Words Code
512K
Memory Density (bits)
8388608
Package Body Material
PLASTIC/EPOXY
Seated Height-Max (mm)
1.2
Supply Voltage-Max (V)
3.6
Supply Voltage-Min (V)
2.7
Supply Voltage-Nom (V)
3
Number of Words (words)
524288
Standby Current-Max (A)
0.01
Supply Current-Max (mA)
75
Package Equivalence Code
TSOP54,.46,32
Moisture Sensitivity Level
3
Peak Reflow Temperature (Cel)
260
Operating Temperature-Max (Cel)
85
Operating Temperature-Min (Cel)
-40
Time@Peak Reflow Temperature-Max (s)
20