CY14B104M-ZSP25XI by Cypress Semiconductor Corporation | Sourcengine

Cypress Semiconductor Corporation CY14B104M-ZSP25XI

Lifecycle status
Active
RoHS
RoHS compliant
REACH
REACH compliant
Description
NVRAM NVSRAM Parallel 4Mbit 3.3V 54-Pin TSOP-II Tray
Category
Semiconductors Memory ICs SRAMs NON-VOLATILE SRAM

ECCN
3A991.B.2.A
ECCN Governance
EAR
HTS Code
8542.32.00.41
SB Code
8542.32.00.40

Technology
CMOS
Width (mm)
10.16
Length (mm)
22.415
JESD-30 Code
R-PDSO-G54
Memory Width
16
Package Code
TSOP2
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE, THIN PROFILE Meter
Surface Mount
YES
Terminal Form
GULL WING
J-STD-609 Code
e3
Memory IC Type
NON-VOLATILE SRAM
Operating Mode
ASYNCHRONOUS
Parallel/Serial
PARALLEL
Terminal Finish
Matte Tin (Sn)
DLA Qualification
Not Qualified
Temperature Grade
INDUSTRIAL
Terminal Position
DUAL
Memory Organization
256KX16
Number of Functions
1
Number of Terminals
54
Terminal Pitch (mm)
0.8
Access Time-Max (ns)
25
Number of Words Code
256K
Memory Density (bits)
4194304
Package Body Material
PLASTIC/EPOXY
Seated Height-Max (mm)
1.2
Supply Voltage-Max (V)
3.6
Supply Voltage-Min (V)
2.7
Supply Voltage-Nom (V)
3
Number of Words (words)
262144
Standby Current-Max (A)
0.005
Supply Current-Max (mA)
70
Package Equivalence Code
TSOP54,.46,32
Moisture Sensitivity Level
3
Peak Reflow Temperature (Cel)
260
Operating Temperature-Max (Cel)
85
Operating Temperature-Min (Cel)
-40
Time@Peak Reflow Temperature-Max (s)
20