CXDM6053N by Central Semiconductor Corp. | Sourcengine

Central Semiconductor Corp. CXDM6053N

Lifecycle status
Discontinued
Description
Power Field-Effect Transistor, 5.3A I(D), 60V, 0.041ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Category
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
SWITCHING
JESD-30 Code
R-PSSO-F3
Configuration
SINGLE WITH BUILT-IN DIODE
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
FLAT
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
3
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (W)
1.2
Drain Current-Max (ID) (A)
5.3
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
60
Feedback Cap-Max (Crss) (pF)
53
Operating Temperature-Max (Cel)
150
Operating Temperature-Min (Cel)
-55
Power Dissipation Ambient-Max (W)
1.2
Pulsed Drain Current-Max (IDM) (A)
30
Drain-source On Resistance-Max (ohm)
0.041