CWDM3011NTIN/LEAD
Central Semiconductor Corp.
- Lifecycle statusActive
- DescriptionPower Field-Effect Transistor, 11A I(D), 30V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- ApplicationSWITCHING
- JESD-30 CodeR-PDSO-G8
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Package ShapeRECTANGULAR
- Package StyleSMALL OUTLINE Meter
- Surface MountYES
- Terminal FormGULL WING
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- J-STD-609 Codee0
- Operating ModeENHANCEMENT MODE
- Terminal FinishTin/Lead (Sn/Pb)
- Terminal PositionDUAL
- Number of Elements1
- Number of Terminals8
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Power Dissipation-Max (W)2.5
- Drain Current-Max (ID) (A)11
- Transistor Element MaterialSILICON
- DS Breakdown Voltage-Min (V)30
- Feedback Cap-Max (Crss) (pF)100
- Operating Temperature-Max (Cel)150
- Operating Temperature-Min (Cel)-55
- Power Dissipation Ambient-Max (W)2.5
- Pulsed Drain Current-Max (IDM) (A)50
- Drain-source On Resistance-Max (ohm)0.02
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CWDM3011NTIN/LEAD