CTLDM601N
Central Semiconductor Corp.
- Lifecycle statusActive-Unconfirmed
- DescriptionSmall Signal Field-Effect Transistor, 0.1A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- ApplicationSWITCHING
- JESD-30 CodeR-PBCC-N3
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Package ShapeRECTANGULAR
- Package StyleCHIP CARRIER Meter
- Surface MountYES
- Terminal FormNO LEAD
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- Case ConnectionDRAIN
- Terminal PositionBOTTOM
- Number of Elements1
- Number of Terminals3
- Package Body MaterialUNSPECIFIED
- Polarity/Channel TypeN-CHANNEL
- Drain Current-Max (ID) (A)0.1
- Transistor Element MaterialSILICON
- DS Breakdown Voltage-Min (V)60
- Drain-source On Resistance-Max (ohm)7.5
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CTLDM601N