CSD19506KCS by Texas Instruments Incorporated | Sourcengine

Texas Instruments Incorporated CSD19506KCS

Lifecycle status
Active
Description
80-V, N channel NexFET™ power MOSFET, single TO-220, 2.3 mOhm 3-TO-220 -55 to 175
Category
Semiconductors Transistors Small Signal Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8541.29.00.95
SB Code
8541.29.00.80

Application
SWITCHING
JESD-30 Code
R-PSFM-T3
Configuration
SINGLE WITH BUILT-IN DIODE
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
THROUGH-HOLE
FET Technology
METAL-OXIDE SEMICONDUCTOR
J-STD-609 Code
e3
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
Terminal Finish
Matte Tin (Sn)
Terminal Position
SINGLE
Additional Feature
AVALANCHE RATED
Number of Elements
1
Number of Terminals
3
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (W)
375
Drain Current-Max (ID) (A)
273
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
80
Feedback Cap-Max (Crss) (pF)
55
Operating Temperature-Max (Cel)
175
Operating Temperature-Min (Cel)
-55
Avalanche Energy Rating (Eas) (mJ)
832
Pulsed Drain Current-Max (IDM) (A)
400
Drain-source On Resistance-Max (ohm)
0.0028