CPV363MUPBF by International Rectifier Corporation | Sourcengine

International Rectifier Corporation CPV363MUPBF

Lifecycle status
Transferred
RoHS
RoHS compliant
REACH
REACH compliant
Description
Insulated Gate Bipolar Transistor, 13A I(C), 600V V(BR)CES, N-Channel
Category
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8541.29.00.95
SB Code
8541.29.00.80

Application
POWER CONTROL
JESD-30 Code
R-PSFM-T13
Configuration
BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
THROUGH-HOLE
VCEsat-Max (V)
2.4
Case Connection
ISOLATED
DLA Qualification
Not Qualified
Terminal Position
SINGLE
Additional Feature
ULTRA FAST
Number of Elements
6
Number of Terminals
13
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Transistor Element Material
SILICON
Gate-emitter Voltage-Max (V)
20
Peak Reflow Temperature (Cel)
260
Collector Current-Max (IC) (A)
13
Operating Temperature-Max (Cel)
150
Gate-emitter Thr Voltage-Max (V)
5.5
Collector-emitter Voltage-Max (V)
600
Power Dissipation Ambient-Max (W)
36
Time@Peak Reflow Temperature-Max (s)
40