CMT4953G by CHAMPION MICROELECTRONIC CORP | Sourcengine

CHAMPION MICROELECTRONIC CORP CMT4953G

Lifecycle status
Contact Mfr
Description
Power Field-Effect Transistor, 4.5A I(D), 30V, 0.055ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
Category
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-PDSO-G8
Configuration
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Terminal Position
DUAL
Number of Elements
2
Number of Terminals
8
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
P-CHANNEL
Drain Current-Max (ID)
4.5 A
Transistor Application
SWITCHING
DS Breakdown Voltage-Min
30 V
Operating Temperature-Max
150 Cel
Operating Temperature-Min
-55 Cel
Power Dissipation-Max (Abs)
2 W
Transistor Element Material
SILICON
Drain-source On Resistance-Max
0.055 ohm
Pulsed Drain Current-Max (IDM)
23 A