CMT05N25N252 by CHAMPION MICROELECTRONIC CORP | Sourcengine

CHAMPION MICROELECTRONIC CORP CMT05N25N252

Lifecycle status
Contact Mfr
Description
Power Field-Effect Transistor, 5A I(D), 250V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
Category
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-PSSO-G2
Configuration
SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code
TO-252
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
2
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Drain Current-Max (ID)
5 A
Transistor Application
SWITCHING
Turn-on Time-Max (ton)
50 ns
Feedback Cap-Max (Crss)
30 pF
DS Breakdown Voltage-Min
250 V
Turn-off Time-Max (toff)
80 ns
Operating Temperature-Max
150 Cel
Operating Temperature-Min
-55 Cel
Power Dissipation-Max (Abs)
50 W
Transistor Element Material
SILICON
Avalanche Energy Rating (Eas)
84 mJ
Drain-source On Resistance-Max
1 ohm
Pulsed Drain Current-Max (IDM)
15 A