CMT01N60GN252
CHAMPION MICROELECTRONIC CORP
- Lifecycle statusContact Mfr
- DescriptionPower Field-Effect Transistor, 1A I(D), 600V, 8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- JESD-30 CodeR-PSSO-G2
- ConfigurationSINGLE WITH BUILT-IN DIODE
- JEDEC-95 CodeTO-252
- Package ShapeRECTANGULAR
- Package StyleSMALL OUTLINE Meter
- Surface MountYES
- Terminal FormGULL WING
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- Case ConnectionDRAIN
- Terminal PositionSINGLE
- Number of Elements1
- Number of Terminals2
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Drain Current-Max (ID)1 A
- Transistor ApplicationSWITCHING
- DS Breakdown Voltage-Min600 V
- Operating Temperature-Max150 Cel
- Operating Temperature-Min-55 Cel
- Power Dissipation-Max (Abs)50 W
- Transistor Element MaterialSILICON
- Avalanche Energy Rating (Eas)20 mJ
- Drain-source On Resistance-Max8 ohm
- Pulsed Drain Current-Max (IDM)9 A
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CMT01N60GN252
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CMT01N60GN252