CM50MXUBP-13T
Mitsubishi Electric Corp.
- Lifecycle statusActive
- RoHSRoHS compliant
- DescriptionInsulated Gate Bipolar Transistor, 50A I(C), 650V V(BR)CES, N-Channel
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- ApplicationPOWER CONTROL
- JESD-30 CodeR-PUFM-D31
- ConfigurationCOMPLEX
- Package ShapeRECTANGULAR
- Package StyleFLANGE MOUNT Meter
- Surface MountNO
- Terminal FormSOLDER LUG
- VCEsat-Max (V)1.85
- Case ConnectionISOLATED
- Terminal PositionUPPER
- Fall Time-Max (ns)600
- Number of Elements7
- Number of Terminals31
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Rise Time-Max (tr) (ns)200
- Power Dissipation-Max (W)270
- Transistor Element MaterialSILICON
- Turn-on Time-Max (ton) (ns)600
- Gate-emitter Voltage-Max (V)20
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Turn-off Time-Max (toff) (ns)1000
- Collector Current-Max (IC) (A)50
- Operating Temperature-Max (Cel)150
- Operating Temperature-Min (Cel)-40
- Gate-emitter Thr Voltage-Max (V)6.6
- Collector-emitter Voltage-Max (V)650
- Screening Level / Reference StandardUL RECOGNIZED
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
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CM50MXUBP-13T