CM30TF-12H
Mitsubishi Electric Corp.
- Lifecycle statusDiscontinued
- DescriptionInsulated Gate Bipolar Transistor, 30A I(C), 600V V(BR)CES, N-Channel
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- VCEsat-Max2.8 V
- JESD-30 CodeR-XUFM-D17
- ConfigurationBRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE
- Package ShapeRECTANGULAR
- Package StyleFLANGE MOUNT Meter
- Surface MountNO
- Terminal FormSOLDER LUG
- Case ConnectionISOLATED
- Terminal PositionUPPER
- Additional FeatureSUPER FAST RECOVERY
- Number of Elements6
- Number of Terminals17
- Qualification StatusNot Qualified
- Package Body MaterialUNSPECIFIED
- Polarity/Channel TypeN-CHANNEL
- Transistor ApplicationMOTOR CONTROL
- Turn-on Time-Nom (ton)120 ns
- Gate-emitter Voltage-Max20 V
- Turn-off Time-Nom (toff)200 ns
- Operating Temperature-Max150 Cel
- Collector Current-Max (IC)30 A
- Power Dissipation-Max (Abs)150 W
- Transistor Element MaterialSILICON
- Collector-emitter Voltage-Max600 V
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
0 suppliers available to buy or to bid for CM30TF-12H
Send an RFQ
Your RFQ will be directly sent to our expert: Pari
Send an RFQ
CM30TF-12H