CM30MD3-12H
Mitsubishi Electric Corp.
- Lifecycle statusDiscontinued
- DescriptionInsulated Gate Bipolar Transistor, 30A I(C), 600V V(BR)CES, N-Channel
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- VCEsat-Max2.8 V
- JESD-30 CodeR-XUFM-X21
- ConfigurationBRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND SINGLE PHASE DIODE BRIDGE
- Package ShapeRECTANGULAR
- Package StyleFLANGE MOUNT Meter
- Surface MountNO
- Terminal FormUNSPECIFIED
- Case ConnectionISOLATED
- Terminal PositionUPPER
- Number of Elements6
- Reference StandardUL RECOGNIZED
- Number of Terminals21
- Qualification StatusNot Qualified
- Package Body MaterialUNSPECIFIED
- Polarity/Channel TypeN-CHANNEL
- Transistor ApplicationMOTOR CONTROL
- Turn-on Time-Nom (ton)420 ns
- Gate-emitter Voltage-Max20 V
- Turn-off Time-Nom (toff)500 ns
- Operating Temperature-Max150 Cel
- Collector Current-Max (IC)30 A
- Power Dissipation-Max (Abs)66 W
- Transistor Element MaterialSILICON
- Collector-emitter Voltage-Max600 V
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
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CM30MD3-12H