CM1000DU-34NF
Mitsubishi Electric Corp.
- Lifecycle statusDiscontinued
- DescriptionInsulated Gate Bipolar Transistor, 1000A I(C), 1700V V(BR)CES, N-Channel
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- VCEsat-Max2.8 V
- JESD-30 CodeR-XUFM-X21
- ConfigurationSERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
- Package ShapeRECTANGULAR
- Package StyleFLANGE MOUNT Meter
- Surface MountNO
- Terminal FormUNSPECIFIED
- Case ConnectionISOLATED
- Terminal PositionUPPER
- Number of Elements2
- Number of Terminals21
- Qualification StatusNot Qualified
- Package Body MaterialUNSPECIFIED
- Polarity/Channel TypeN-CHANNEL
- Transistor ApplicationPOWER CONTROL
- Gate-emitter Voltage-Max20 V
- Operating Temperature-Max150 Cel
- Collector Current-Max (IC)1000 A
- Power Dissipation-Max (Abs)8900 W
- Transistor Element MaterialSILICON
- Collector-emitter Voltage-Max1700 V
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CM1000DU-34NF
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CM1000DU-34NF