CLF1G0060S-10
Ampleon Netherlands B.V.
- Lifecycle statusContact Mfr
- RoHSRoHS compliant
- DescriptionRF Power Field-Effect Transistor, 1-Element, C Band, Gallium Nitride, N-Channel, High Electron Mobility FET
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- JESD-30 CodeR-CDFP-F2
- ConfigurationSINGLE
- Package ShapeRECTANGULAR
- Package StyleFLATPACK Meter
- Surface MountYES
- Terminal FormFLAT
- FET TechnologyHIGH ELECTRON MOBILITY
- Operating ModeDEPLETION MODE
- Case ConnectionSOURCE
- Terminal PositionDUAL
- Number of Elements1
- Reference StandardIEC-60134
- Number of Terminals2
- Package Body MaterialCERAMIC, METAL-SEALED COFIRED
- Polarity/Channel TypeN-CHANNEL
- Highest Frequency BandC BAND
- Transistor ApplicationAMPLIFIER
- DS Breakdown Voltage-Min150 V
- Transistor Element MaterialGALLIUM NITRIDE
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CLF1G0060S-10
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CLF1G0060S-10