CHM5506JGP
CHENMKO ENTERPRISE CO LTD
- Lifecycle statusActive
- DescriptionPower Field-Effect Transistor, 5.5A I(D), 60V, 0.055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8541.29.00.95
- SB Code8541.29.00.80
- ApplicationSWITCHING
- JESD-30 CodeR-PDSO-G8
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Package ShapeRECTANGULAR
- Package StyleSMALL OUTLINE Meter
- Surface MountYES
- Terminal FormGULL WING
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- Terminal PositionDUAL
- Number of Elements1
- Number of Terminals8
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Power Dissipation-Max (W)2.5
- Drain Current-Max (ID) (A)5.5
- Transistor Element MaterialSILICON
- Turn-on Time-Max (ton) (ns)40
- DS Breakdown Voltage-Min (V)60
- Feedback Cap-Max (Crss) (pF)35
- Turn-off Time-Max (toff) (ns)50
- Operating Temperature-Max (Cel)150
- Operating Temperature-Min (Cel)-55
- Power Dissipation Ambient-Max (W)2.5
- Pulsed Drain Current-Max (IDM) (A)20
- Drain-source On Resistance-Max (ohm)0.055
0 suppliers available to buy or to bid for CHM5506JGP
Send an RFQ
Send an RFQ Your RFQ will be directly sent to our expert: Pari
Send an RFQ
CHM5506JGP
Send an RFQ
CHM5506JGP