CFH120-10
Qorvo, Inc
- Lifecycle statusDiscontinued
- REACHREACH compliant
- DescriptionRF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, P-Channel, High Electron Mobility FET
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- ApplicationAMPLIFIER
- JESD-30 CodeR-PDSO-G4
- ConfigurationSINGLE
- Package ShapeRECTANGULAR
- Package StyleSMALL OUTLINE Meter
- Surface MountYES
- Terminal FormGULL WING
- FET TechnologyHIGH ELECTRON MOBILITY
- Operating ModeDEPLETION MODE
- Terminal PositionDUAL
- Additional FeatureLOW NOISE
- Number of Elements1
- Number of Terminals4
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeP-CHANNEL
- Highest Frequency BandK BAND
- Power Gain-Min (Gp) (dB)10.5
- Drain Current-Max (ID) (A)0.04
- Transistor Element MaterialGALLIUM ARSENIDE
- DS Breakdown Voltage-Min (V)3
- Operating Temperature-Max (Cel)85
- Operating Temperature-Min (Cel)-30
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CFH120-10
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CFH120-10