CEI655N
CHINO-EXCEL TECHNOLOGY CO LTD
- Lifecycle statusContact Mfr
- DescriptionPower Field-Effect Transistor, 15A I(D), 150V, 0.153ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8541.29.00.95
- SB Code8541.29.00.80
- JESD-30 CodeR-PSIP-T3
- ConfigurationSINGLE WITH BUILT-IN DIODE
- JEDEC-95 CodeTO-262AA
- Package ShapeRECTANGULAR
- Package StyleIN-LINE Meter
- Surface MountNO
- Terminal FormTHROUGH-HOLE
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- Terminal PositionSINGLE
- Number of Elements1
- Number of Terminals3
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Drain Current-Max (ID)15 A
- Turn-on Time-Max (ton)135 ns
- Feedback Cap-Max (Crss)70 pF
- DS Breakdown Voltage-Min150 V
- Turn-off Time-Max (toff)170 ns
- Operating Temperature-Max175 Cel
- Operating Temperature-Min-55 Cel
- Power Dissipation-Max (Abs)83 W
- Transistor Element MaterialSILICON
- Power Dissipation Ambient-Max83 W
- Drain-source On Resistance-Max0.153 ohm
- Pulsed Drain Current-Max (IDM)60 A
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