CED55N10 by CHINO-EXCEL TECHNOLOGY CO LTD | Sourcengine

CHINO-EXCEL TECHNOLOGY CO LTD CED55N10

Lifecycle status
Contact Mfr
Description
Power Field-Effect Transistor, 55A I(D), 100V, 0.016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251
Category
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-PSIP-T3
Configuration
SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code
TO-251
Package Shape
RECTANGULAR
Package Style
IN-LINE Meter
Surface Mount
NO
Terminal Form
THROUGH-HOLE
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
3
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Drain Current-Max (ID)
55 A
Turn-on Time-Max (ton)
72 ns
Feedback Cap-Max (Crss)
140 pF
DS Breakdown Voltage-Min
100 V
Turn-off Time-Max (toff)
156 ns
Operating Temperature-Max
175 Cel
Operating Temperature-Min
-55 Cel
Power Dissipation-Max (Abs)
83.3 W
Transistor Element Material
SILICON
Drain-source On Resistance-Max
0.016 ohm
Pulsed Drain Current-Max (IDM)
220 A