CEB658N
CHINO-EXCEL TECHNOLOGY CO LTD
- Lifecycle statusContact Mfr
- DescriptionPower Field-Effect Transistor, 16A I(D), 180V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8541.29.00.95
- SB Code8541.29.00.80
- JESD-30 CodeR-PSSO-G2
- ConfigurationSINGLE WITH BUILT-IN DIODE
- JEDEC-95 CodeTO-263AB
- Package ShapeRECTANGULAR
- Package StyleSMALL OUTLINE Meter
- Surface MountYES
- Terminal FormGULL WING
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- Case ConnectionDRAIN
- Terminal PositionSINGLE
- Number of Elements1
- Number of Terminals2
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Drain Current-Max (ID)16 A
- Turn-on Time-Max (ton)95 ns
- Feedback Cap-Max (Crss)60 pF
- DS Breakdown Voltage-Min180 V
- Turn-off Time-Max (toff)245 ns
- Operating Temperature-Max150 Cel
- Operating Temperature-Min-55 Cel
- Power Dissipation-Max (Abs)125 W
- Transistor Element MaterialSILICON
- Power Dissipation Ambient-Max125 W
- Drain-source On Resistance-Max0.22 ohm
- Pulsed Drain Current-Max (IDM)64 A
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