CE3512K2-C1
CALIFORNIA EASTERN LABORATORIES
- Lifecycle statusActive
- RoHSRoHS compliant
- REACHREACH compliant
- DescriptionTrans RF FET N-CH 4V 0.068A 4-Pin Micro-X T/R
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- JESD-30 CodeS-PQMW-F4
- ConfigurationSINGLE
- Package ShapeSQUARE
- Package StyleMICROWAVE Meter
- Surface MountYES
- Terminal FormFLAT
- FET TechnologyJUNCTION
- Operating ModeDEPLETION MODE
- Terminal PositionQUAD
- Number of Elements1
- Number of Terminals4
- Power Gain-Min (Gp)12.5 dB
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Drain Current-Max (ID)0.015 A
- Highest Frequency BandX BAND
- Transistor ApplicationAMPLIFIER
- DS Breakdown Voltage-Min3 V
- Transistor Element MaterialSILICON
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CE3512K2-C1