CDM6401-AQT&R
CONTINENTAL DEVICE INDIA LTD
- Lifecycle statusActive
- RoHSRoHS compliant
- REACHREACH compliant
- DescriptionPower Field-Effect Transistor, 4.3A I(D), 12V, 0.085ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8541.29.00.95
- SB Code8541.29.00.80
- ApplicationSWITCHING
- JESD-30 CodeR-PDSO-G3
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Package ShapeRECTANGULAR
- Package StyleSMALL OUTLINE Meter
- Surface MountYES
- Terminal FormGULL WING
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- Terminal PositionDUAL
- Additional FeatureULTRA LOW RESISTANCE
- Number of Elements1
- Number of Terminals3
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeP-CHANNEL
- Power Dissipation-Max (W)1.3
- Drain Current-Max (ID) (A)4.3
- Transistor Element MaterialSILICON
- DS Breakdown Voltage-Min (V)12
- Feedback Cap-Max (Crss) (pF)125
- Operating Temperature-Max (Cel)150
- Operating Temperature-Min (Cel)-55
- Power Dissipation Ambient-Max (W)1.3
- Avalanche Energy Rating (Eas) (mJ)33
- Pulsed Drain Current-Max (IDM) (A)34
- Drain-source On Resistance-Max (ohm)0.085
- Screening Level / Reference StandardAEC-Q101; IATF 16949
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CDM6401-AQT&R