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CD40108BD3

HARRIS SEMICONDUCTOR

HARRIS SEMICONDUCTOR CD40108BD3
  • ECCN
    3A001.a.2.c
  • ECCN Governance
    EAR
  • HTS Code
    8542.32.00.41
  • SB Code
    8542.32.00.40
  • Technology
    CMOS
  • JESD-30 Code
    R-CDIP-T24
  • Memory Width
    4
  • Package Code
    DIP
  • Package Shape
    RECTANGULAR
  • Package Style
    IN-LINE Meter
  • Surface Mount
    NO
  • Terminal Form
    THROUGH-HOLE
  • J-STD-609 Code
    e0
  • Memory IC Type
    MULTI-PORT SRAM
  • Terminal Finish
    TIN LEAD
  • DLA Qualification
    Not Qualified
  • Temperature Grade
    MILITARY
  • Terminal Position
    DUAL
  • Memory Organization
    4X4
  • Number of Functions
    1
  • Number of Terminals
    24
  • Terminal Pitch (mm)
    2.54
  • Number of Words Code
    4
  • Memory Density (bits)
    16
  • Package Body Material
    CERAMIC, METAL-SEALED COFIRED
  • Supply Voltage-Max (V)
    18
  • Supply Voltage-Min (V)
    3
  • Number of Words (words)
    4
  • Package Equivalence Code
    DIP24,.6
  • Operating Temperature-Max (Cel)
    125
  • Operating Temperature-Min (Cel)
    -55
  • Screening Level / Reference Standard
    38535Q/M;38534H;883B

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CD40108BD3
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CD40108BD3