CA3127F
HARRIS SEMICONDUCTOR
- Lifecycle statusDiscontinued
- DescriptionRF Small Signal Bipolar Transistor, 0.02A I(C), 5-Element, Ultra High Frequency Band, Silicon, NPN
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- VCEsat-Max0.5 V
- JESD-30 CodeR-CDIP-T16
- ConfigurationSEPARATE, 5 ELEMENTS WITH BUILT-IN DIODE
- JESD-609 Codee0
- Package ShapeRECTANGULAR
- Package StyleIN-LINE Meter
- Surface MountNO
- Terminal FormTHROUGH-HOLE
- Terminal FinishTIN LEAD
- Terminal PositionDUAL
- Number of Elements5
- Number of Terminals16
- Qualification StatusNot Qualified
- Package Body MaterialCERAMIC, METAL-SEALED COFIRED
- Polarity/Channel TypeNPN
- Highest Frequency BandULTRA HIGH FREQUENCY BAND
- Transistor ApplicationAMPLIFIER
- DC Current Gain-Min (hFE)35
- Operating Temperature-Max175 Cel
- Collector Current-Max (IC)0.02 A
- Transistor Element MaterialSILICON
- Collector-emitter Voltage-Max15 V
- Transition Frequency-Nom (fT)1150 MHz
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CA3127F
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CA3127F