C35B
HARRIS SEMICONDUCTOR
- Lifecycle statusDiscontinued
- DescriptionSilicon Controlled Rectifier, 35A I(T), 200V V(DRM)
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- Surface MountNO
- Holding Current-Max100 mA
- Leakage Current-Max12 mA
- Trigger Device TypeSCR
- On-state Current-Max35 A
- Operating Temperature-Max125 Cel
- Operating Temperature-Min-60 Cel
- DC Gate Trigger Current-Max40 mA
- DC Gate Trigger Voltage-Max3 V
- Non-Repetitive Pk On-state Cur225 A
- Repetitive Peak Off-state Voltage200 V
- Circuit Commutated Turn-off Time-Nom30 us
- Critical Rate of Rise of Off-state Voltage-Min20 V/us
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C35B