C2109-4S6002
Intel Corporation
- Lifecycle statusDiscontinued
- DescriptionDRAM, 8KX1, 250ns, MOS, CDIP16
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8542.32.00.02
- SB Code8542.32.00.15
- I/O TypeSEPARATE
- TechnologyMOS
- JESD-30 CodeR-XDIP-T16
- Memory Width1
- Organization8KX1
- Package CodeDIP
- JESD-609 Codee0
- Package ShapeRECTANGULAR
- Package StyleIN-LINE Meter
- Surface MountNO
- Terminal FormTHROUGH-HOLE
- Memory Density8192 bit
- Memory IC TypeOTHER DRAM
- Refresh Cycles64
- Terminal Pitch2.54 mm
- Access Time-Max250 ns
- Number of Words8192 words
- Terminal FinishTin/Lead (Sn/Pb)
- Temperature GradeCOMMERCIAL
- Terminal PositionDUAL
- Supply Current-Max35 mA
- Number of Terminals16
- Number of Words Code8K
- Qualification StatusNot Qualified
- Package Body MaterialCERAMIC
- Output Characteristics3-STATE
- Package Equivalence CodeDIP16,.3
- Operating Temperature-Max70 Cel
- Operating Temperature-Min0 Cel
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C2109-4S6002