- Lifecycle statusActive
- DescriptionPower Field-Effect Transistor, 6A I(D), 800V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- ConfigurationSINGLE
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- Number of Elements1
- Polarity/Channel TypeN-CHANNEL
- Drain Current-Max (ID) (A)6
- Transistor Element MaterialSILICON
- DS Breakdown Voltage-Min (V)800
0 suppliers available to buy or to bid for BUZ355
Send an RFQ
Send an RFQ Your RFQ will be directly sent to our expert: Pari
Send an RFQ
BUZ355
Send an RFQ
BUZ355