BUZ103SL-4
Siemens AG
- Lifecycle statusTransferred
- DescriptionPower Field-Effect Transistor, 4.8A I(D), 55V, 0.055ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- ApplicationSWITCHING
- JESD-30 CodeR-PDSO-G28
- ConfigurationSEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE
- Package ShapeRECTANGULAR
- Package StyleSMALL OUTLINE Meter
- Surface MountYES
- Terminal FormGULL WING
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- DLA QualificationNot Qualified
- Terminal PositionDUAL
- Additional FeatureLOGIC LEVEL COMPATIBLE
- Number of Elements4
- Number of Terminals28
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Drain Current-Max (ID) (A)4.8
- Transistor Element MaterialSILICON
- DS Breakdown Voltage-Min (V)55
- Avalanche Energy Rating (Eas) (mJ)140
- Pulsed Drain Current-Max (IDM) (A)19.2
- Drain-source On Resistance-Max (ohm)0.055
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BUZ103SL-4
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BUZ103SL-4