BUZ102S-4
Siemens AG
- Lifecycle statusTransferred
- DescriptionPower Field-Effect Transistor, 6.4A I(D), 55V, 0.028ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- JESD-30 CodeR-PDSO-G28
- ConfigurationSEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE
- Package ShapeRECTANGULAR
- Package StyleSMALL OUTLINE Meter
- Surface MountYES
- Terminal FormGULL WING
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- DLA QualificationNot Qualified
- Terminal PositionDUAL
- Number of Elements4
- Number of Terminals28
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Drain Current-Max (ID) (A)6.4
- Transistor Element MaterialSILICON
- DS Breakdown Voltage-Min (V)55
- Avalanche Energy Rating (Eas) (mJ)245
- Pulsed Drain Current-Max (IDM) (A)25.6
- Drain-source On Resistance-Max (ohm)0.028
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BUZ102S-4
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BUZ102S-4