BUP603D
Siemens AG
- Lifecycle statusDiscontinued
- DescriptionInsulated Gate Bipolar Transistor, 42A I(C), 600V V(BR)CES, N-Channel, TO-218
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8541.29.00.95
- SB Code8541.29.00.80
- VCEsat-Max2.7 V
- JESD-30 CodeR-PSFM-T3
- ConfigurationSINGLE WITH BUILT-IN DIODE
- JEDEC-95 CodeTO-218
- Package ShapeRECTANGULAR
- Package StyleFLANGE MOUNT Meter
- Surface MountNO
- Terminal FormTHROUGH-HOLE
- Terminal PositionSINGLE
- Additional FeatureHIGH SPEED
- Fall Time-Max (tf)700 ns
- Number of Elements1
- Rise Time-Max (tr)120 ns
- Number of Terminals3
- Qualification StatusNot Qualified
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Transistor ApplicationMOTOR CONTROL
- Turn-on Time-Max (ton)75 ns
- Turn-on Time-Nom (ton)50 ns
- Gate-emitter Voltage-Max20 V
- Turn-off Time-Max (toff)340 ns
- Turn-off Time-Nom (toff)250 ns
- Operating Temperature-Max150 Cel
- Collector Current-Max (IC)42 A
- Transistor Element MaterialSILICON
- Gate-emitter Thr Voltage-Max6.5 V
- Collector-emitter Voltage-Max600 V
- Power Dissipation Ambient-Max200 W
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BUP603D