BSS95
Siemens AG
- Lifecycle statusDiscontinued
- DescriptionPower Field-Effect Transistor, 0.8A I(D), 240V, 10ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-202
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8541.29.00.95
- SB Code8541.29.00.80
- JESD-30 CodeR-PSFM-T3
- ConfigurationSINGLE WITH BUILT-IN DIODE
- JEDEC-95 CodeTO-202
- JESD-609 Codee0
- Package ShapeRECTANGULAR
- Package StyleFLANGE MOUNT Meter
- Surface MountNO
- Terminal FormTHROUGH-HOLE
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- Terminal FinishTin/Lead (Sn/Pb)
- Terminal PositionSINGLE
- Number of Elements1
- Number of Terminals3
- Qualification StatusNot Qualified
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Drain Current-Max (ID)0.8 A
- Turn-on Time-Max (ton)20 ns
- Feedback Cap-Max (Crss)9 pF
- DS Breakdown Voltage-Min240 V
- Turn-off Time-Max (toff)58 ns
- Operating Temperature-Max150 Cel
- Power Dissipation-Max (Abs)8.3 W
- Transistor Element MaterialSILICON
- Power Dissipation Ambient-Max8.3 W
- Drain-source On Resistance-Max10 ohm
- Pulsed Drain Current-Max (IDM)3.2 A
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BSS95