BSN10AT/R
PHILIPS SEMICONDUCTORS
- Lifecycle statusDiscontinued
- DescriptionPower Field-Effect Transistor, 0.175A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- ConfigurationSINGLE
- JESD-609 Codee0
- Surface MountNO
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- Terminal FinishTin/Lead (Sn/Pb)
- Number of Elements1
- Polarity/Channel TypeN-CHANNEL
- Drain Current-Max (ID)0.175 A
- Operating Temperature-Max150 Cel
- Power Dissipation-Max (Abs)0.83 W
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BSN10AT/R