BSM75GB170DN2
Siemens AG
- Lifecycle statusDiscontinued
- DescriptionInsulated Gate Bipolar Transistor, 110A I(C), 1700V V(BR)CES, N-Channel
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8541.29.00.95
- SB Code8541.29.00.80
- VCEsat-Max3.9 V
- JESD-30 CodeR-XUFM-X7
- ConfigurationSERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
- Package ShapeRECTANGULAR
- Package StyleFLANGE MOUNT Meter
- Surface MountNO
- Terminal FormUNSPECIFIED
- Case ConnectionISOLATED
- Terminal PositionUPPER
- Fall Time-Max (tf)140 ns
- Number of Elements2
- Rise Time-Max (tr)300 ns
- Number of Terminals7
- Qualification StatusNot Qualified
- Package Body MaterialUNSPECIFIED
- Polarity/Channel TypeN-CHANNEL
- Turn-on Time-Max (ton)800 ns
- Turn-on Time-Nom (ton)400 ns
- Gate-emitter Voltage-Max20 V
- Turn-off Time-Max (toff)1000 ns
- Turn-off Time-Nom (toff)650 ns
- Operating Temperature-Max150 Cel
- Collector Current-Max (IC)110 A
- Transistor Element MaterialSILICON
- Collector-emitter Voltage-Max1700 V
- Power Dissipation Ambient-Max1250 W
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BSM75GB170DN2