BSM50GB160D
Siemens AG
- Lifecycle statusDiscontinued
- DescriptionInsulated Gate Bipolar Transistor, 50A I(C), 1600V V(BR)CES, N-Channel
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8541.29.00.95
- SB Code8541.29.00.80
- JESD-30 CodeR-PUFM-X7
- ConfigurationSERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
- Package ShapeRECTANGULAR
- Package StyleFLANGE MOUNT Meter
- Surface MountNO
- Terminal FormUNSPECIFIED
- Terminal PositionUPPER
- Number of Elements2
- Number of Terminals7
- Qualification StatusNot Qualified
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Collector Current-Max (IC)50 A
- Transistor Element MaterialSILICON
- Collector-emitter Voltage-Max1600 V
- Power Dissipation Ambient-Max300 W
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BSM50GB160D