BSM35GB120DN2
Siemens AG
- Lifecycle statusDiscontinued
- DescriptionInsulated Gate Bipolar Transistor, 50A I(C), 1200V V(BR)CES, N-Channel
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8541.29.00.95
- SB Code8541.29.00.80
- VCEsat-Max3.2 V
- JESD-30 CodeR-CUFM-X7
- ConfigurationSERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
- Package ShapeRECTANGULAR
- Package StyleFLANGE MOUNT Meter
- Surface MountNO
- Terminal FormUNSPECIFIED
- Case ConnectionISOLATED
- Terminal PositionUPPER
- Fall Time-Max (tf)75 ns
- Number of Elements2
- Rise Time-Max (tr)120 ns
- Number of Terminals7
- Qualification StatusNot Qualified
- Package Body MaterialCERAMIC, METAL-SEALED COFIRED
- Polarity/Channel TypeN-CHANNEL
- Turn-on Time-Max (ton)120 ns
- Turn-on Time-Nom (ton)60 ns
- Gate-emitter Voltage-Max20 V
- Turn-off Time-Max (toff)600 ns
- Turn-off Time-Nom (toff)400 ns
- Operating Temperature-Max150 Cel
- Collector Current-Max (IC)50 A
- Transistor Element MaterialSILICON
- Gate-emitter Thr Voltage-Max6.5 V
- Collector-emitter Voltage-Max1200 V
- Power Dissipation Ambient-Max560 W
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BSM35GB120DN2