BSM300GA100D
Siemens AG
- Lifecycle statusTransferred
- DescriptionInsulated Gate Bipolar Transistor, 300A I(C), 1000V V(BR)CES, N-Channel
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8541.29.00.95
- SB Code8541.29.00.80
- ApplicationPOWER CONTROL
- JESD-30 CodeR-PUFM-X4
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Package ShapeRECTANGULAR
- Package StyleFLANGE MOUNT Meter
- Surface MountNO
- Terminal FormUNSPECIFIED
- VCEsat-Max (V)3.3
- Case ConnectionISOLATED
- DLA QualificationNot Qualified
- Terminal PositionUPPER
- Number of Elements1
- Number of Terminals4
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Transistor Element MaterialSILICON
- Turn-on Time-Max (ton) (ns)270
- Turn-on Time-Nom (ton) (ns)220
- Gate-emitter Voltage-Max (V)20
- Collector Current-Max (IC) (A)300
- Operating Temperature-Max (Cel)150
- Gate-emitter Thr Voltage-Max (V)6.2
- Collector-emitter Voltage-Max (V)1000
- Power Dissipation Ambient-Max (W)2500
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BSM300GA100D