BSM294F by Siemens AG | Sourcengine

Siemens AG BSM294F

Lifecycle status
Discontinued
Description
Power Field-Effect Transistor, 18A I(D), 1000V, 0.63ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Category
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8541.29.00.95
SB Code
8541.29.00.80

JESD-30 Code
R-PUFM-X7
Configuration
SERIES, 2 ELEMENTS WITH BUILT-IN DIODE
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
UNSPECIFIED
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Case Connection
ISOLATED
Terminal Position
UPPER
Number of Elements
2
Number of Terminals
7
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Drain Current-Max (ID)
18 A
Transistor Application
SWITCHING
Feedback Cap-Max (Crss)
600 pF
DS Breakdown Voltage-Min
1000 V
Operating Temperature-Max
150 Cel
Power Dissipation-Max (Abs)
400 W
Transistor Element Material
SILICON
Power Dissipation Ambient-Max
400 W
Drain-source On Resistance-Max
0.63 ohm
Pulsed Drain Current-Max (IDM)
72 A