BSM25GD120DN1
Siemens AG
- Lifecycle statusTransferred
- DescriptionInsulated Gate Bipolar Transistor, 25A I(C), 1200V V(BR)CES, N-Channel
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8541.29.00.95
- SB Code8541.29.00.80
- JESD-30 CodeR-PUFM-P17
- ConfigurationBRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE
- Package ShapeRECTANGULAR
- Package StyleFLANGE MOUNT Meter
- Surface MountNO
- Terminal FormPIN/PEG
- DLA QualificationNot Qualified
- Terminal PositionUPPER
- Number of Elements6
- Number of Terminals17
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Transistor Element MaterialSILICON
- Collector Current-Max (IC) (A)25
- Collector-emitter Voltage-Max (V)1200
- Power Dissipation Ambient-Max (W)300
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BSM25GD120DN1