BSM150GB120DN2
Siemens AG
- Lifecycle statusDiscontinued
- DescriptionInsulated Gate Bipolar Transistor, 210A I(C), 1200V V(BR)CES, N-Channel
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8541.29.00.95
- SB Code8541.29.00.80
- JESD-30 CodeR-CUFM-X7
- ConfigurationSERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
- Package ShapeRECTANGULAR
- Package StyleFLANGE MOUNT Meter
- Surface MountNO
- Terminal FormUNSPECIFIED
- VCEsat-Max (V)3
- Case ConnectionISOLATED
- DLA QualificationNot Qualified
- Terminal PositionUPPER
- Fall Time-Max (ns)100
- Number of Elements2
- Number of Terminals7
- Package Body MaterialCERAMIC, METAL-SEALED COFIRED
- Polarity/Channel TypeN-CHANNEL
- Rise Time-Max (tr) (ns)200
- Transistor Element MaterialSILICON
- Turn-on Time-Max (ton) (ns)400
- Turn-on Time-Nom (ton) (ns)200
- Gate-emitter Voltage-Max (V)20
- Turn-off Time-Max (toff) (ns)800
- Turn-off Time-Nom (toff) (ns)600
- Collector Current-Max (IC) (A)210
- Operating Temperature-Max (Cel)150
- Gate-emitter Thr Voltage-Max (V)6.5
- Collector-emitter Voltage-Max (V)1200
- Power Dissipation Ambient-Max (W)2500
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BSM150GB120DN2