BSM121AR
Siemens AG
- Lifecycle statusDiscontinued
- DescriptionPower Field-Effect Transistor, 130A I(D), 200V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8541.29.00.95
- SB Code8541.29.00.80
- JESD-30 CodeR-PUFM-X4
- ConfigurationSINGLE WITH BUILT-IN RESISTOR
- Package ShapeRECTANGULAR
- Package StyleFLANGE MOUNT Meter
- Surface MountNO
- Terminal FormUNSPECIFIED
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- Case ConnectionISOLATED
- Terminal PositionUPPER
- Number of Elements1
- Number of Terminals4
- Qualification StatusNot Qualified
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Drain Current-Max (ID)130 A
- Transistor ApplicationSWITCHING
- Feedback Cap-Max (Crss)1000 pF
- DS Breakdown Voltage-Min200 V
- Operating Temperature-Max150 Cel
- Transistor Element MaterialSILICON
- Power Dissipation Ambient-Max700 W
- Drain-source On Resistance-Max0.02 ohm
- Pulsed Drain Current-Max (IDM)390 A
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BSM121AR