BSM10GD120DN2E3224
Siemens AG
- Lifecycle statusDiscontinued
- DescriptionInsulated Gate Bipolar Transistor, 15A I(C), 1200V V(BR)CES, N-Channel
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8541.29.00.95
- SB Code8541.29.00.80
- JESD-30 CodeR-XUFM-X17
- ConfigurationBRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE
- Package ShapeRECTANGULAR
- Package StyleFLANGE MOUNT Meter
- Surface MountNO
- Terminal FormUNSPECIFIED
- VCEsat-Max (V)3.2
- Case ConnectionISOLATED
- DLA QualificationNot Qualified
- Terminal PositionUPPER
- Fall Time-Max (ns)120
- Number of Elements6
- Number of Terminals17
- Package Body MaterialUNSPECIFIED
- Polarity/Channel TypeN-CHANNEL
- Rise Time-Max (tr) (ns)100
- Transistor Element MaterialSILICON
- Turn-on Time-Max (ton) (ns)110
- Turn-on Time-Nom (ton) (ns)55
- Gate-emitter Voltage-Max (V)20
- Turn-off Time-Max (toff) (ns)570
- Turn-off Time-Nom (toff) (ns)380
- Collector Current-Max (IC) (A)15
- Operating Temperature-Max (Cel)150
- Gate-emitter Thr Voltage-Max (V)6.5
- Collector-emitter Voltage-Max (V)1200
- Power Dissipation Ambient-Max (W)480
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BSM10GD120DN2E3224