BSM100GAL120D
Siemens AG
- Lifecycle statusDiscontinued
- DescriptionInsulated Gate Bipolar Transistor, 100A I(C), 1200V V(BR)CES, N-Channel
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8541.29.00.95
- SB Code8541.29.00.80
- VCEsat-Max3.3 V
- JESD-30 CodeR-PUFM-X7
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Package ShapeRECTANGULAR
- Package StyleFLANGE MOUNT Meter
- Surface MountNO
- Terminal FormUNSPECIFIED
- Case ConnectionISOLATED
- Terminal PositionUPPER
- Additional FeatureCHOPPER SWITCH
- Number of Elements1
- Number of Terminals7
- Qualification StatusNot Qualified
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Transistor ApplicationPOWER CONTROL
- Turn-on Time-Max (ton)220 ns
- Turn-on Time-Nom (ton)180 ns
- Gate-emitter Voltage-Max20 V
- Operating Temperature-Max150 Cel
- Collector Current-Max (IC)100 A
- Transistor Element MaterialSILICON
- Gate-emitter Thr Voltage-Max6.2 V
- Collector-emitter Voltage-Max1200 V
- Power Dissipation Ambient-Max1000 W
0 suppliers available to buy or to bid for BSM100GAL120D
Send an RFQ
Send an RFQ Your RFQ will be directly sent to our expert: Pari
Send an RFQ
BSM100GAL120D
Send an RFQ
BSM100GAL120D